| Du Jianchang (杜健昌),Fan Chen,Wang Zhigong,Xu Jian.[J].高技术通讯(英文),2019,25(4):364~368 |
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| Fully-integrated ultra-wide band LNA in 0.18μm CMOS technology for 3-10GHz applications |
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| DOI：doi：10.3772/j.issn.1006-6748.2019.04.003 |
| 中文关键词: |
| 英文关键词: ultra wide band (UWB), self-biased, current-reused, gain compensation, CMOS low noise amplifer (LNA) |
| 基金项目: |
| Author Name | Affiliation | | Du Jianchang (杜健昌) | | | Fan Chen | | | Wang Zhigong | | | Xu Jian | |
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| 中文摘要: |
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| 英文摘要: |
| The paper presents a fully integrated ultra-wide band (UWB) low noise amplifier (LNA) for 3-10GHz applications. It employs self-biased resistive-feedback and current-reused technique to achieve wide input matching and low power characteristics. An improved biased architecture is adopted in the second stage to attain a better gain-compensation performance. The design is verified with TSMC standard 1P6M 0.18μm RF CMOS process. The measurement results show that the parasitic problem of the transistors at high frequencies is solved. A high and flat S21 of 9.7±1.5dB and the lowest NF 3.5dB are achieved in the desired frequency band. The power consumption is only 7.5mA under 1.6V supply. The proposed LNA achieves broadband flat gain, low noise, and high linearity performance simultaneously, allowing it to be used in 3-10GHz UWB applications. |
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