| Zhang Zheng (张正),Zhang Yanhua,Yang Ruizhe,Shen Pei,Ding Chunbao,Liu Yaze,Huang Xin,Chen Jitian.[J].高技术通讯(英文),2021,27(1):38~42 |
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| A compact and reconfigurable low noise amplifier employing combinational active inductors and composite resistors feedback techniques |
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| DOI：10.3772/j.issn.1006-6748.2021.01.005 |
| 中文关键词: |
| 英文关键词: variable gain, variable bandwidth, low noise amplifier (LNA), resistance feedback, tunable active inductor (AI) |
| 基金项目: |
| Author Name | Affiliation | | Zhang Zheng (张正) | (Faculty of Information Technology, Beijing University of Technology, Beijing 100124, P.R.China) | | Zhang Yanhua | (Faculty of Information Technology, Beijing University of Technology, Beijing 100124, P.R.China) | | Yang Ruizhe | (Faculty of Information Technology, Beijing University of Technology, Beijing 100124, P.R.China) | | Shen Pei | (Faculty of Information Technology, Beijing University of Technology, Beijing 100124, P.R.China) | | Ding Chunbao | (Faculty of Information Technology, Beijing University of Technology, Beijing 100124, P.R.China) | | Liu Yaze | (Faculty of Information Technology, Beijing University of Technology, Beijing 100124, P.R.China) | | Huang Xin | (Faculty of Information Technology, Beijing University of Technology, Beijing 100124, P.R.China) | | Chen Jitian | (Faculty of Information Technology, Beijing University of Technology, Beijing 100124, P.R.China) |
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| 中文摘要: |
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| 英文摘要: |
| A compact and reconfigurable low noise amplifier (LNA) is proposed by combining an input transistor, composite transistors with Darlington configuration as the amplification and output transistor, T-type structure composite resistors instead of a simplex structure resistor, a shunt inductor feedback realized by a tunable active inductor (AI), a shunt inductor peaking technique realized by another tunable AI. The division and collaboration among different resistances in the T-type structure composite resistor realize simultaneously input impedance matching, output impedance matching and good noise performance; the shunt feedback and peaking technique using two tunable AIs not only extend frequency bandwidth and improve gain flatness, but also make the gain and frequency band can be tuned simultaneously by the external bias of tunable AIs; the Darlington configuration of composite transistors provides high gain; furthermore, the adoption of the small size AIs instead of large size passive spiral inductor, and the use of composite resistors make the LNA have a small size. The LNA is fabricated and verified by GaAs/InGaP hetero-junction bipolar transistor (HBT) process. The results show that at the frequency of 7GHz, the gain S21 is maximum and up to 19dB; the S21 can be tuned from 17dB to 19dB by tuning external bias of tunable AIs, that is, the tunable amount of S21 is 2dB, and similarly at 8GHz; the tunable range of 3dB bandwidth is 1GHz. In addition, the gain S21 flatness is better than 0.4dB under frequency from 3.1GHz to 10.6GHz; the size of the LNA only has 760μm×1260μm (including PADs). Therefore, the proposed strategies in the paper provide a new solution to the design of small size and reconfigurable ultra-wideband (UWB) LNA and can be used further to adjust the variations of gain and bandwidth of radio frequency integrated circuits (RFICs) due to package, parasitic and the variation of fabrication process and temperature. |
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