文章摘要
Yao Changfei (姚常飞),Zhou Ming,Luo Yunsheng,Kou Yanan,Li Jiao.[J].高技术通讯(英文),2015,21(1):85~89
A 5.4mW and 6.1% efficiency fixed-tuned 214GHz frequency doubler with Schottky barrier diodes
  
DOI:10.3772/j.issn.1006-6748.2015.01.012
中文关键词: 
英文关键词: frequency doubler, planar schottky diode, quartz substrate, efficiency
基金项目:
Author NameAffiliation
Yao Changfei (姚常飞)  
Zhou Ming  
Luo Yunsheng  
Kou Yanan  
Li Jiao  
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中文摘要:
      
英文摘要:
      A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50μm thick quartz substrate. Diode embedding impedance is found by full-wave analysis with lumped port to model the nonlinear junction for impedance matching without the need of diode equivalent circuit model. All the matching circuit is designed “on-chip” and the multiplier is self-biasing. To the doubler, a conversion efficiency of 6.1% and output power of 5.4mW are measured at 214GHz with input power of 88mW, and the typical measured efficiency is 4.5% in 200~225GHz.
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